With the increase in size of LCD panels and glass need of manufacturing, manufacturing equipment has also become larger, requiring ever-larger equipment investments.SYSKEY systems offer processes for amorphous silicon (a-Si), silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON) and multi-layer depositions.





  • Amorphous Silicon (a-Si).
  • Silicon Nitride (SiNx).
  • Silicon Oxide, Silane based (SiOx).
  • Silicon Oxide, TEOS based (SiOx).
Configurations and benefits Options
  • Flexible substrate size up to 550 x 650 mm2 (glass).
  • Excellent thin-film uniformity of less than ±3%.
  • Up to six 7 gas lines per process chamber standard.
  • In-situ chamber clean using remote plasma source.
  • Substrate heating up to 380°C with stable temperature control.
  • Cassette port.
  • Patented TEOS vaporizing system (TVS) for TEOS deposition.
  • Extra spare port for OES, RGA or extra process monitoring.


We use cookies to ensure that we give you the best experience on our website. If you continue to use this site we will assume that you are happy with it.(Privacy policy)