With the increase in size of LCD panels and glass need of manufacturing, manufacturing equipment has also become larger, requiring ever-larger equipment investments.SYSKEY systems offer processes for amorphous silicon (a-Si), silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON) and multi-layer depositions.





  • Amorphous Silicon (a-Si).
  • Silicon Nitride (SiNx).
  • Silicon Oxide, Silane based (SiOx).
  • Silicon Oxide, TEOS based (SiOx).
Configurations and benefits Options
  • Flexible substrate size up to 550 x 650 mm2 (glass).
  • Excellent thin-film uniformity of less than ±3%.
  • Up to six 7 gas lines per process chamber standard.
  • In-situ chamber clean using remote plasma source.
  • Substrate heating up to 380°C with stable temperature control.
  • Cassette port.
  • Patented TEOS vaporizing system (TVS) for TEOS deposition.
  • Extra spare port for OES, RGA or extra process monitoring.