It can be considered as a special type of chemical vapor deposition. The majority of ALD reactions use two or more chemicals called precursors.
Plasma enhanced atomic layer deposition (PEALD) is an advanced method based on conventional ALD by using plasma as a condition to crack precursor materials instead of relying only on the thermal energy from the heated substrate. This process allows fabricating the conformal thin films of various materials with atomic-scale control without high temperature required to deliver the necessary activation energy. For SYSKEY's system can control the plasma and ALD process, the film thickness and uniformity is less than +/- 1%.
SONOS Memory / MOS devices demo
High-K films for GaN power device
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