Atomic layer etching (ALE) is an advanced etching technique that can precisely control its etching depth. As the functional size of the device is further reduced, further use of ALE is required to achieve its required accuracy.


This has drawn attention to a technique called atomic layer etching (ALE), which overcomes the limitations of conventional (continuous) etching at the atomic level. Plasma-based atomic layer etching is a periodic etching process by gas implantation and ion bombardment, and has the potential to remove a single thin film with very little damage.

For SYSKEY's system can control the gas and plasma process, can perfectly produce high- precision thin films etching.

                  3D Fin-TFT




Applications Chamber
  • Silicon and silicon-based compounds (SiO2, Si3N4).
  • MEMS.
  • Metal, silicon, resist etching.
  • Aluminum or stainless steel chamber with small footprint for fast cycle time.
  • Chamber temperature control by using water chiller/heater.
Configurations and benefits Options
  • Flexible substrate size up to 12 inch in diameter.
  • Etch system with the capability to etch in ICP, RIE, ALE and DRIE mode in the same reactor.
  • Excellent thin-film uniformity of less than ±3%.
  • Mass flow controllers with highly uniform gas distribution.
  • Substrate chuck heating up to 300°C or cooling down to -20°C by stable process temperatures control.
  • ICP plasma up to 2000W with Tornado ICP coil increasing deposition under low temperature.
  • Low damage, high rate process, high aspect ratio.
  • Wafer clamping with helium backside cooling helps anisotropic etch.
  • Plasma cleaning of chamber is possible for some materials.
  • RF powered showerhead with optimised gas distribution.
  • Electrostatic Chuck.
  • Endpoint monitors (OES, laser) compatibility.
  • Cluster allows for vacuum transfer of substrates.






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