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Products

Multi-Layer Sputter

 

 

The structure of the multilayer films are widely used in various field, and the precision systems require more stringent specifications, including light, sounds, and electricity components. The high-quality multilayer films are becoming increasingly important in precision systems that single material thin film cannot practice the required specifications. Therefore, the development of new materials and the processes of accurately control of thin films have become an important direction of multilayer thin films research.

For SYSKEY's multilayer sputter system has a substrate the planetary rotation mechanism, which can achieve accurate multilayer films structure and can be mass-produced. 

 

 

 

                       Substrate revolution mechanism can realize precise multilayer film structure.


 

Applications Chamber
  • Intergrated with Load-Lock, robot arm, glove box.
  • Combined with Ion-source, Thermal source, E-beam, etc.
  • RF or DC bias switching.
  • Thickness monitor.
  • Substrate RF plasma cleaning.
  • Extra spare port for OES, RGA or extra process monitoring.

  • Flexible chamber sizes depend on substrate size and applications.
  • Full-width opening door integrated two viewports with shutters for observing substrate and sputter sources.
  • Full range vacuum gauge with display and Baratron gauge for closed-loop pressure control.
  • Ultimate vacuum of chamber about 10-8 Torr.

 

Configurations and benefits Options
  • Flexible substrate size up to 12 inch.
  • Excellent thin-film uniformity of less than ±3%.
  • Magnetron sputtering sources (up to 6 sources) with optional target sizes.
  • RF, DC or pulsed-DC for non-conductive or conductive target.
  • Deposition of multilayer films with selected target materials.
  • Mass flow controllers (up to 4 gas lines).
  • Substrate holder heating up to 600°C.
  • Adjustable substrate to target spacing.
  • Shutters are installed each sputtering source and substrate.
  • Intergrated with Load-Lock, robot arm, glove box.
  • Combined with Ion-source, thermal source, E-beam, etc.
  • RF or DC bias switching.
  • Thickness monitor.
  • Substrate RF plasma cleaning.
  • Extra spare port for OES, RGA or extra process monitoring.