Product ID:A100008

Plasma Etch System

  • Substrate Size: up to 8 inch
  • Vacuum 10-7 torr range base pressure
  • Thickness uniformity : ±5%
  • Substrate temperature from -20 °C to 300 °C
  • RIE plasma etcher
  • ICP-RIE plasma etcher
  • Full auto control with touch screen display
High vacuum pumping system
OES or RGA  systems.
Load-Lock System(single substrate, cassette-to-cassette)
Cluster able for vacuum transfer of substrates


Basic plasma research
Photoresist Ashing 
III-V compound semiconducts (GaAsn,InP,GaN)
Si, SiO2, SiNx